Abstract
The highest current gain (more than 100 at 77 K) is reported in GaIlnAs/InP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GaInAs/InP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
