Abstract
The highest current gain (more than 100 at 77 K) is reported in GaIlnAs/InP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GaInAs/InP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect.
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