Abstract
The fabrication and characteristics of Npn AlGaAs/GaAs single heterojunction bipolar transistors (HBTs) with an emitter edge-thinning structure have been studied. A new and simple selective wet etching method was used to make the emitter edge-thinning structure. The best device obtained shows a common emitter differential current gain of 8700. To our knowledge, this is the highest current gain of AlGaAs/GaAs HBT grown by MBE reported to date. The Gummel plot of this device is analyzed and compared with another HBT which has no emitter edge-thinning structure and was fabricated on the same epiwafer. It is found that the base current of the emitter edge-thinning device is one-tenth smaller than that of the controlled device. In low current region, the effect of emitter edge-thinning structure is even more significant. Because of the reduction of 2-kT surface recombination current, the emitter edge-thinning device reveals its intrinsic 1-kT base current in high current region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
