Abstract

Orthogonal Cu3SnS4 (CTS) nano-crystalline were synthesized. It is clarified that Cu7S4 seeds first nucleated in the solvothermal process at 130 °C. When the temperature elevated to 180 °C, Sn4+ began to enter the Cu7S4 lattice to form orthorhombic CTS nano-crystals. Secondary phase of SnS occurred at 200 °C and could not be eliminated by prolonging heating time. The as-prepared CTS@SnS nano-crystals were selenized at 500 °C for 20 min to form CTSXSe4-X. The SnS were completely eliminated and main S sites in CTS were substituted by Se anions during the selenization. The CTSXSe4-X films with different thickness were used as counter electrodes (CEs) of dye-sensitized solar cells (DSSCs). CTSXSe4-X CEs have good conductivity and effective electrocalalytic activity for I3- reduction. In the optimal case of 1.7 μm thick CTSXSe4-X CE, power conversion efficiency of 7.57% was achieved which is 88.6% of that of the same structural device with commercial Pt CE.

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