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Abstract
Nitrogen-doped ZnSe films have been grown on (100) GaAs substrates by MOVPE using diethylzinc (DEZ) and hydrogen selenide as reactants. NH 3 gas was used as a dopant source. The nitrogen concentrations of these films, determined using SIMS (secondary ion mass spectroscopy) analysis, were up to 2×10 19 cm -3. PL spectra and X-ray diffraction measurements have revealed marked changes in both film crystallinities and PL characteristics. Nitrogen doping exceeding 1×10 18 cm -3 causes a deterioration of film crystallinity due to the formation of nitrogen related complex defects. It is found that the thermal annealing after growth was effective for the recovery of the crystallinity of the nitrogen-dopen ZnSe films.
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