High capacitance density metal-insulator-metal structures based on a high-κ HfNxOy–SiO2–HfTiOy laminate stack

Abstract

We demonstrate a metal-insulator-metal (MIM) capacitor containing five laminate films of HfNxOy, SiO2, and HfTiOy. The MIM capacitors exhibit capacitance densities and dielectric constants of 16fF∕μm2 and 27 in the as-deposited state and 11fF∕μm2 and 30 after thermal annealing. The tangent loss of the annealed structures measured at room temperature and at 0.1MHz is 0.0055. Low leakage current densities (1.5×10−7A∕cm2 at 2V), linear and quadratic capacitance voltage coefficients of 19ppm∕V and 235ppm∕V2, respectively, as well as a capacitance temperature coefficient of 650ppm∕°C were demonstrated.