Abstract
A high capability open growth system for isothermal vapour phase epitaxy has been developed. The system is based on a quasi-closed quartz container with multiple growth bins. The container is placed inside a quartz tube which is filled with H 2 or evaluated. The system enables epitaxial Hg 1 − x Cd x Te layers from 1 to 1000 μm in thickness to be grown on bulk CdTe, Cd 1 − z Zn z Te and alternative substrates such as mica, sapphire and GaAs. The layer morphology is entirely determined by the substrate quality. Several methods of layer compositional profile control are proposed. A process duration of one day (including low temperature annealing) has been developed to fabricate layers of 3–30 μm thickness and up to about 1000 cm 2 in total area as a basis for manufacturing PV, PC and PEM IR detectors.
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