Abstract
In this article, we present the fabrication and investigation of high-brightness semiconductor lasers. Details about the epitaxial growth together with results of broad-area lasers are shown. For the fabrication of the dry-etched laser mirrors, a multilayer etch mask together with an optimized chemically-assisted ion-beam etching (CAIBE) process have been developed leading to ultra-smooth laser facets. With this technique, unstable-resonator lasers with curved mirrors have been fabricated. The devices were tested in pulsed and continuous wave operation, exhibiting high optical output powers. Corrected far fields were measured and the corresponding virtual source size was calculated to be in the range of 2 µm leading to a brightness of 60 MW/(cm2 sr). This was achieved in cw operation using only the main lobe intensity of the uncoated single-facet output power.
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