Abstract
The layer structure of InGaAs/InP double heterojunction bipolar transistor (DHBT) is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6 V. The current gain cutoff frequency is as high as 170 GHz and the maximum oscillation frequency reached 253 GHz. The DHBT with such high performances can be used to make W-band power amplifier.
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