Abstract
β-Ga2O3 power diodes were expected to possess low turn-on voltage (V on), low reverse leakage (J R), and high blocking capability for low power losses. In this work, a low V on (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress J R originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes.
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