High-breakdown-voltage Ga 0.51In 0.49P/GaAs I-HEMT and I 2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy

Abstract

The first Ga 0.51In 0.49P/GaAs inverted-structure high electron mobility transistors (I-HEMT) and insulated-gate inverted-structure high electron mobility transistors (I 2HEMT) grown by gas source molecular beam epitaxy (GSMBE) have been fabricated and measured. Very high drain-to-source breakdown voltage was obtained in the I-HEMT (23 V) and I 2HEMT (13 V). The maximum g ms achieved for I-HEMT and I 2HEMT were 120 and 100 mS/mm at room temperature, respectively. No I- V collapse was observed at 77 K. The high breakdown characteristics were attributed to the use of a high band gap GaInP passivation layer between the gate and drain. These results indicate that Ga 0.51In 0.49P/GaAs I-HEMT and I 2HEMT are promising to be used as high breakdown (high power) devices.