High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

Abstract

AbstractFluoride‐based plasma treatment was employed to improve reverse characteristics. The fluoride‐based plasma treatment using CF4 gas was performed on drain‐side gate edge region, where field plate metal is deposited, at an RF power of 30W for 120 sec. Experimental results showed that fluoride based plasma treated AlGaN/GaN HEMT had stable reverse blocking capability by successfully suppressing leakage current as well as increasing off‐state breakdown voltage (VBR) with minimized degradation in forward characteristics. Leakage current of untreated sample was increased in proportional to reverse bias voltage while that of fluoride plasma treated sample was remained at nano level. Fluoride plasma treatment improved breakdown voltage of device from 900 V to 1400 V with 16% decrease in output current (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)