Abstract
A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.
Highlights
Heterogeneous integration has been demonstrated as a promising technology for realizing photonic integrated circuits (PICs) on silicon
We present a novel type of heterogeneously integrated uni-traveling carrier photodetector (UTC-PD) aiming for high bandwidth operation
In order to determine the responsivity of the UTC-PD, the coupling loss from fiber to WG is first determined using standard WG-loss measurement on reference WG arrays fabricated on the same chip [17], and calibrated out
Summary
Heterogeneous integration has been demonstrated as a promising technology for realizing photonic integrated circuits (PICs) on silicon. It allows for monolithic integration of highperformance InP-based light sources on silicon [1,2,3,4,5], and provides photodetectors (PDs) with high efficiency and low dark current [6]. UTC designs were investigated in Ge-based PDs on silicon [14]; their performance is still inferior to the InP-based devices, primarily due to the lack of velocity overshoot of electrons and the inability for complex bandgap engineering in Ge/Si structures. InP-based modified UTC-PDs heterogeneously integrated on silicon-oninsulator (SOI) waveguide circuits were demonstrated showing excellent high-power performance, thanks to the complex bandgap engineering in their structures [7]. More compact PDs with lower capacitance are demanded for very high data rate (100 Gb/s and beyond) applications in optical interconnects and telecommunications
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