Abstract
In this study, we successfully fabricated a W-band high-power photoreceiver with high output power and low power consumption. This W-band photoreceiver was integrated with a bias-free uni-travelling carrier photodetector (UTC-PD) and an InP high electron mobility transistor (PHEMT) amplifier for the first time. An ultrabroad 3 dB bandwidth beyond 110 GHz in an UTC-PD and maximum oscillation frequency of 320 GHz in a PHEMT low-noise amplifier were used for this hybrid integration. At 109 GHz, a high radio frequency output power of +10 dBm, high transimpedance gain of 828 □, and low power consumption of 67 mW was achieved in an optical-electrical converting process.
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