Abstract
Low-voltage pentacene-based organic thin-film transistors (OTFTs) have been fabricated using the high-κ organometallic lanthanide complex, Tb(tta)3L2NR (tta=2-thenoyltrifluoroacetonate, L2NR=(−)-4, 5-pinene bipyridine) as the gate dielectric material. The optimized gate insulator exhibits a low leakage current density of <10−7Acm−2 under bias voltage of −5V, a smooth surface with RMS of about 0.40nm, a high capacitance of 43nFcm−2 and an equivalent κ value of 7. The obtained OTFTs show high electric performance with carrier mobility of 0.20cm2V−1s−1, on/off ratio of 4×105, threshold voltage of −0.6V, and subthreshold slope of 0.7Vdec−1 when operated at −5V. The results demonstrate the organometallic lanthanide complex is a promising candidate as gate insulator for low-voltage OTFTs.
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