HgTe and Hg 1−XCd XTe vapor phase epitaxial growth under controlled Hg pressure

Abstract

We tried to make the epitaxial growth of HgTe and Hg 1- X Cd X Te films on CdTe substrates from the vapor phase under controlled mercury pressure in a sealed reaction chamber. As a reaction chamber, a horizontal quartz tube with 3 cm diameter and 30 cm length was used. The temperature ranges of substrate and HgTe source were 200–250 and 300–350°C, respectively. The mercury pressure employed was 0.1–10 Torr. HgTe and Hg 1- X Cd X Te were successfully grown. A growth rate of 1–4 Å/s was obtained for HgTe film, but the rate depends severely on source and substrate temperatures and Hg pressure.