Abstract
Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256×256 30-µm unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long wavelength infrared (LWIR) spectral regions. The FPAs configured for MWIR/MWIR, MWIR/LWIR, and LWIR/LWIR detection are used for target identification, signature recognition, and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all dual-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art, single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single-mesa, single-indium bump, and sequential-mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.
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