Abstract
It has been determined that anodic oxidation of (Hg,Cd)Te proceeds via a dissolution– precipitation mechanism. The initial film formation can be understood in terms of electrochemical parameters and, therefore, can be controlled in a rational manner. For example, stirring the anodization solution during dissolution prohibits film formation at low current densities due to an increase in the rate of diffusion of ionic species away from the anode. Increasing the solution pH makes the anodic oxide more soluble and semiconductor dissolution can be sustained at a higher current density. MOS structures fabricated incorporating this electroetch in the passivation process show a lower oxide fixed charge likely owing to the removal of the TeO2 film present on the semiconductor following a Br2/methanol etch.
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