Abstract

Hg-Ba-Ca-Cu-O films have been grown on CeO2/R-plane sapphiresubstrates using a two-step process. First, a 200 nm thick Ba-Ca-Cu-(O, F)precursor film was prepared by sequential evaporation, thenHg-Re-Ba-Ca-Cu-O pellets as a source of Hg-vapour were applied using heattreatment. The prepared films were continuous with sufficient adhesion to thesubstrate and a maximum zero-resistance critical temperature ofTC0 = 118 K. The x-ray diffraction measurements of all the prepared filmsconfirmed the Hg-1212 phase as well as the minor Hg-1223 phase in some cases.We found that the best results were obtained at the mercuration temperature of775 °C and an optimal annealing time within the range 0.5-5 h. Thesuperconducting properties of the films prepared under unsuitable conditionswere mostly improved after annealing in oxygen atmosphere. Darker parts of thefilm exhibited a different surface morphology and the presence of the Hg-1223phase in plate-like grains.

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