Abstract
HgCdTe alloys are the most widely used materials in the field of high-performance infrared detection. During the last decade they have moved on from laboratory to industry. This has been possible due to great efforts in HgCdTe characterization. An overview of the most widely used characterization techniques and of the main technological approaches to make HgCdTe photovoltaic detectors is given. However the new requirements on detectors demand novel characterization techniques enabling a rapid, non-destructive, on-line evaluation of the samples to be employed. Some examples of these techniques are given in this paper, such as scanned photoluminescence (PL) and double crystal X-ray diffraction mapping. Preliminary correlations with device performance are given.
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