Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE

Abstract

This paper reports on the large area growth of InGaP/GaAs heterostructures for short wavelength applications (λ ∼ 650 nm) by low pressure MOVPE in a vertical, high speed, rotating disk reactor. Highly uniform films were obtained both on a single 50 mm diam wafer at the center of a 5 inch diam wafer platter and on three, 50 mm diameter GaAs wafers symmetrically placed on a 5 inch diam platter. Characterization was performed by x-ray diffraction, SEM, and room temperature photoluminescence (PL) mapping. For the single wafer growth, PL mapping results show that the total range on wavelength was ±2 nm with a 2 mm edge exclusion. The standard deviation of the peak wavelength,σ w , is 0.7 nm. Thickness uniformity, measured by SEM, is less than 2%. Similar results were obtained for the multi-wafer runs. Each individual wafer has aσ w of 1.1 nm. The wafers have nearly identical PL maps with the variation of the average wavelength from the three wafers within ±0.1 nm.