Abstract
HfOxNy thin-film formation on three-dimensional (3D) Si structures by electron cyclotron resonance (ECR) plasma sputtering was investigated. The sputtering conditions, particularly deposition pressure, and the process of HfOxNy formation, were optimized to prepare uniform films with good electrical properties. It was found that an increase in pressure during HfN deposition from 0.15 to 0.19 Pa improved the step coverage of the HfOxNy film in the sidewall region. Two different processes of HfOxNy thin-film formation using ECR plasma sputtering, namely, HfO2 nitridation and HfN oxidation, were investigated to obtain uniform coverage by optimizing the deposition conditions. However, the interfacial layer (IL) growth was enhanced, which increased equivalent oxide thickness (EOT) in the case of HfO2 nitridation. This problem was mitigated by HfN oxidation even for 3D structures. EOTs of 0.94 and 1.7 nm were obtained for the planar HfOxNy/Si and 3D HfOxNy/Si structures, respectively.
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