HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Abstract

In this work, we demonstrate that device characteristics could be significantly improved by incorporating more fluorine (F) into HfO2 dielectrics layer using low power SF6 plasma treatment at different positions of gate oxide. Fluorine was incorporated in three ways: 4 min treatment from the top of 6 nm HfO2, 4 min treatment in the middle of 6 nm HfO2, or 2 min treatment each in the middle and from the top of HfO2 layer. Drive current (Id) and effective channel mobility could be improved by 70% and 51%, respectively, for devices with treatment both in the middle and from the top of HfO2 high κ layer compared to those of devices without SF6 treatment. The impact of SF6 plasma treatment on devices with HfO2/In0.53Ga0.47As stack is also presented.