Abstract
High density, high-speed and low power consuming nonvolatile memories are currently being vigorously explored for use in next-generation computation, particularly due to the performance gap between the logic and memory elements of the current computational architecture.[1–3] Of various explored material systems, electrically switchable spontaneous polarization of ferroelectric materials enables a robust nonvolatile memory solution.[4–6] Using ultrathin films of ferroelectric materials as a tunnel barrier in metal/ferroelectric/metal trilayer structure, so called ferroelectric tunnel junctions (FTJ), is being explored widely as a potential nonvolatile memory elements. Unlike to ferroelectric RAM (FeRAM), FTJ offers nondestructive readout, in addition to low operation energy and high operation speed.[7] In this work,[8] we have demonstrated FTJs with a very large OFF/ON resistance ratio and relatively low resistance area product (RA) with ~ 1 nm thick Zr doped HfO2 (HZO) ferroelectric tunnel barrier. We stabilized ferroelectricity in ultrathin films of rhombohedral HZO (R-HZO) through the substrate-induced compressive strain. The resistance area product at the bias voltage (~ 300 mV) required for one-half of the zero-bias TER ratio is three orders of magnitude lower than reported value with relatively thick ferroelectric barriers. [9, 10] The OFF/ON resistance ratio of 135 achieved with ~ 1 nm barrier, which is enhanced to 105 with increasing the barrier thickness to 2.5 nm, is the highest reported value for HZO barrier based FTJs. These results set the stage for further exploration of Hafnia-based FTJs for non-volatile memory applications.
Published Version
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