Abstract
We demonstrate a new bottom antireflective coating (BARC) layer for ArF excimer laser lithography. The antireflective layer is composed of hexamethyldisiloxane (HMDSO) film, which is deposited by the conventional electron cyclotron resonance-plasma-enhanced chemical-vapor deposition process. We obtain the appropriate HMDSO films for BARC layers by varying the gas-flow rate ratio of oxygen to HMDSO. Such a process has several advantages: high deposition rate, low process temperature, easy film removal, and reduced cost. Measured reflectances of less than 0.5% on both Al-Si and silicon crystal substrates have been achieved and agree well with the simulated reflectances. The swing effect is shown to be significantly reduced by addition of the HMDSO-based BARC layer.
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