Abstract
Single-crystalline hexagonal tantalum pentoxide (δ-Ta2O5) films were grown on LaAlO3 (010) substrates by MOCVD. A high substrate temperature of 840 °C was required to achieve the best crystalline quality and the root-mean-square surface roughness of the optimum film was 0.26 nm. The films grew along the δ-Ta2O5 [100] direction and the heteroepitaxial relationship between the film and the substrate was confirmed as δ-Ta2O5 (100) ‖ LaAlO3 (010) with δ-Ta2O5 [0001] ‖ LaAlO3 <001>. The film showed a stoichiometric ratio of Ta2O5 and a pentavalent state of Ta element. The optical band gap of the single-crystalline δ-Ta2O5 film was determined as 4.19 eV.
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