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Abstract
The damage produced by ion implantation of Kr + in Si substrates at temperatures in the 250–500°C range has been investigated by channeling effect technique and by transmission electron microscopy. Among the variety of defects present after hot implants the hexagonal silicon phase has been investigated. It is located mainly at the depth where the maximum of the energy density deposited into nuclear collisions occurs. The hexagonal phase is formed at target temperatures above 350°C and at fluences higher than 2 × 10 15 /cm 2 . With increasing temperature the size of the hexagonal silicon particles and the critical fluence for their formation increase. The hexagonal phase is also nucleated during high current-high dose implants of P + . In all the cases the phase disappears after prolonged annealing at T⩾700°C. The experimental region fluence-temperature for the hexagonal phase existence has been determined. The formation and thermal stability of the phase is qualitatively considered according to the existing models.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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