Hexagonal GaN 1− xP x growth by laser-assisted metalorganic chemical vapor deposition

Abstract

The growth of nitride-rich GaN 1− x P x using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) in order to obtain N-rich GaN 1− x P x with a larger composition ratio ( x) was tried for the first time. An ArF (193 nm) laser was used for the low temperature decomposition of source gases. Trimethylgallium (TMG), ammonia (NH 3) and tertialbutylphosphine (TBP) were used as source gases. As a result, N-rich GaN 1− x P x was grown at 800–950°C. A higher growth rate of 30 μm/h was obtained by this method. Using a secondary ion mass spectrometry (SIMS), we confirmed that the P incorporation was about 9% into GaN 1− x P x . This composition ( x) was higher than that using a conventional MOCVD. Furthermore, the photoluminescence (PL) spectra of GaN 1− x P x was measured. It was observed that the peak shift of the GaN 1− x P x band-edge emission was over 100 meV compared with that of GaN. This larger peak shift at the band-edge emission was obtained by applying thermal annealing after growth.