Abstract
We proposed intercalation of hexagonal boron nitride (hBN) in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.
Highlights
The scaling of integrated circuit (IC) for high performance has resulted in interconnects being subjected to serious problems like high current density and enormous thermal stress, a critical challenge for IC fabrication and design
On the other hand, it was demonstrated that performance and scalability of monolayer graphene (MG) based wire are limited by its 2-D atomically thin geometry[4] and MG are vulnerable to the defects or traps of the substrate
It was found that interlayer resistance, which contributes to the total resistance of multilayer grapheme (MLG), limits the performance of MLG.[5]
Summary
The scaling of integrated circuit (IC) for high performance has resulted in interconnects being subjected to serious problems like high current density and enormous thermal stress, a critical challenge for IC fabrication and design. Hexagonal boron nitride intercalated multilayer graphene: a possible ultimate solution to ultra-scaled interconnect technology
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