Abstract
This paper provides a brief overview on recent advances in tackling the doping and optical polarization issues involved in the development of high performance deep ultraviolet (DUV) light emitting devices. In particular, recent developments in the exploitation of a novel DUV emitter layer structure based on a hexagonal boron nitride (hBN) and AlGaN p–n junction and doping engineering to potentially overcome the intrinsic problem of low p-type conductivity (or low free hole concentration) in Al-rich AlGaN are summarized. By implementing the wide bandgap and highly conductive hBN p-type layer strategy in nitride DUV emitters, p-type conductivities and DUV transparency of the electron blocking layer and p-type contact layer will be dramatically increased. This will significantly improve the free hole injection and quantum efficiency, reduce the operating voltage and heat generation, and increase the device operating lifetime. The growth of undoped and Mg-doped p-type hBN via a metal organic chemical vapor deposition technique has been studied. Furthermore, p-hBN/n-AlGaN p–n junctions have been fabricated and characterized to demonstrate the feasibility and potential of p-hBN/n-AlGaN p–n heterostructure based DUV light emitting devices. Further improvements in material quality, p-type conductivity control and device processing procedures would enhance the properties of these p–n structures, which could ultimately pave the way towards the realization of high efficiency nitride DUV photonic devices.
Published Version
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