Abstract
ABSTRACTThe results of the work on the technology and characterization methods of resonant cavity enhanced (RCE) photodiode heterostructures with strained InxGa1–xAs quantum wells (0.65≤x≤0.82), designed for the 1.8 - 2 μm spectral range, are presented. The heterostructures grown on InP by metalorganic chemical vapor deposition have been investigated by high-resolution X-ray diffraction with synchrotron source, transmission electron microscopy, photoluminescence and reflectivity spectra measurements. Non-resonant photodiodes fabricated from these epitaxial structures exhibit dark current densities below 10-6 A/cm2 and quantum efficiencies above 1 % (even without bias). These quantum efficiency values are a good basis for the resonant cavity enhancement. The optical field enhancement at quantum wells has been examined in resonant heterostructures before processing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
