Abstract
Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.
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