Acoustic Carrier Transport in GaAs Nanowires

Abstract

AbstractPresent semiconductor technologies allow the growth of different types of nanostructures, such as quantum wells, wires, and dots on the surface of a single semiconductor crystal. The piezoelectric field of surface acoustic waves (SAWs) propagating on the crystal surface provides an efficient mechanism for the controlled exchange of electrons and holes between these nanostructures. In this review, we explore this ability of dynamic SAW fields to demonstrate acoustically driven single-photon sources using coupled quantum wells and dots based on (Al,Ga)As (311)A material system. We address the growth of the coupled nanostructures by molecular beam epitaxy, the dynamics of the acoustic carrier transfer between them, as well as the acoustic control of recombination in quantum dots. The latter provides the basis for the operation of the acoustically driven single-photon sources, which are characterized by a low jitter and repetition frequency close to 1 GHz.KeywordsSingle PhotonSurface Acoustic WaveAcoustic PowerEmission CenterMolecular Beam Epitaxy GrowthThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.