Abstract
The ferroelectric barium–strontium titanate (BST) multi-layer structure has been formed directly on silicon carbide by serial deposition and “in situ” annealing of layers. This approach allowed us to achieve the high-quality perovskite lattice of ferroelectric that provides the best combination of high tunability and low losses for BST/SiC structures at microwaves. Electric characteristics of BST/SiC planar capacitor structures were studied under the high level of microwave power for the first time. The BST/SiC structure consisted of highly oriented ferroelectric film on highly heat-conducting substrate have demonstrated the absence of the overheating of the active area of the capacitor under dissipated power density up to 125 W/mm 2 .
Highlights
Today there is a stable interest in ferroelectric (FE) materials for tunable microwave (MW)applications caused by the dependence of dielectric permittivity of ferroelectrics on the strength of applied electric field [1,2,3,4]
Electric characteristics of barium–strontium titanate (BST)/silicon carbide (SiC) planar capacitor structures were studied under a high level of microwave power for the first time
It was shown that the intermediate annealing technique allows us to improve substantially the crystal quality of multi-layered BST films that, in turn, determines the enhanced electrical quality of capacitors on their base
Summary
Today there is a stable interest in ferroelectric (FE) materials for tunable microwave (MW)applications caused by the dependence of dielectric permittivity of ferroelectrics on the strength of applied electric field [1,2,3,4]. The perspective properties of ferroelectrics at microwaves are high dielectric nonlinearity, low losses, fast switching time, low power consumption, and possibility to work under the high level of operating power [5,6,7,8]. The most promising ferroelectric materials for MW applications are solid solutions of barium and strontium titanates Bax Sr1− x TiO3 (BST) in thin-film form, which exhibit a dielectric permittivity from 150 to 6000 when the x parameter changes from 0 to 0.6, while the material remains in the paraelectric state at room temperature [3,6,8,11,12,13,14]. Previous researches demonstrated that BST ferroelectric films maintain the high tunability and low dielectric loss in the wide frequency range
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