Abstract
Ethylene glycol, widely used as antifreeze for planes and motor cars, is odorless and harmful to humans; thus, high-performance ethylene glycol gas sensors are highly demanded. Herein, a type-II heterostructure of p-type nickel oxide foam/ n-type indium sulfide (NIS) was prepared for ethylene glycol gas sensing. The assembled NIS sensor exhibits a unique response (Rg/Ra=180.39) to 100 ppm ethylene glycol at a low temperature of 150 ℃ and a fast response/ recovery time (11.43 s/ 6.16 s), as well as excellent repeatability and long-term stability. The excellent gas-sensitive performance of the NIS sensors can be attributed to the formation of p-NiO/n-In2S3 heterojunctions resulting in a large change in the potential barrier, which leads to an increased sensing response. These results suggest that elaborate heterostructure engineering of NiO can potentially achieve highly sensitive ethylene glycol gas sensors.
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