Abstract
Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.
Highlights
One-dimensional (1-D) semiconductor nanostructures have been attracting a great deal of attention due to their excellent electronic and optoelectronic performance [1,2,3,4,5]
Wide band gap II-VI semiconductors have been extensively studied for many years according to their great potentials for optoelectronic applications: blue-green laser diodes based on ZnSe [10], high-efficiency solar cells based on CdTe thin films [11], high performance radiation detecting devices based on CdZnTe [12], etc
This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications
Summary
One-dimensional (1-D) semiconductor nanostructures have been attracting a great deal of attention due to their excellent electronic and optoelectronic performance [1,2,3,4,5]. Many high efficiency device applications were achieved based on building blocks of semiconductor nanostructures, such as photodetectors, solar cells, laser diodes, field-effect transistors, etc. It should be pointed out that the nanoscale heterojunctions have superior performances in terms of atomically sharp interfaces, fewer interface defects, and higher emitting efficiency compared to their thin film and bulk counterparts. As a result, they open up promising future for high-performance device applications, such as light emitting diodes, laser diodes, photodetectors, and solar cells [21,22,23,24]. Construction Strategies of Heterojunctions Based on II-VI Compound Semiconductor
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