Abstract
The high-speed operation of submicrometer Al/sub x/Ga/sub 1-x/As/GaAs unipolar heterojunction transistors is examined using two-dimensional time-dependent self-consistent ensemble Monte Carlo simulation. Careful device design can significantly increase ballistic injection over the heterojunction in steady state by eliminating retarding gate-induced space-charge reversal there. Design for optimal large-signal transient operation must also avoid gate-voltage-dependent ballistic injection. General design principles for optimizing high-speed operation are proposed. The resulting VFETs show cutoff frequencies of 225 GHz at large drain currents at 300 K, with frequency-independent two-port y parameters. >
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call