Abstract

In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS 2 ), and tungsten diselenide (WSe 2 ). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS 2 -WSe 2 -Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe 2 -Gr) does not show any NDR in its I–V characteristics.

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