Abstract
InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.
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