Heterogeneous integration of high-quality diamond on aluminum nitride with low and high seeding density

Abstract

High quality diamond, ∼ 10 µm thick, is deposited on AlN/Si by hot filament chemical vapor deposition with low (108 cm−2) and high seeding density (>1012 cm−2). The higher seeding density suppresses three-dimensional growth resulting in films with reduced roughness, improved uniformity, and a more abrupt transition without voids between the diamond and AlN compared to films grown at lower seeding density. Furthermore, micro-Raman results of diamond films grown using higher seeding density show improved quality extending from the substrate to the surface.