Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Abstract

Integration of the high-quality GaSb layer on an Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, a suitable ion implantation fluence of 5 × 1016-cm−2 H ions for GaSb layer transfer is confirmed. Combining the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing is revealed in detail. With the direct wafer bonding, the GaSb layer is successfully transferred onto a (100) Si substrate covered by 500-nm thickness thermal oxide SiO2 layer. After being annealed at 200 °C, the GaSb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the x-ray rocking curve (XRC).