HVPE Growth of GaN on a GaN Templated (111) Si Substrate

Abstract

The hydride vapor phase epitaxial (HVPE) growth of GaN was attempted on a (111) Si substrate. In order to suppress the chemical reaction of the Si at high temperatures, the surface of the substrate was covered by a thin SiO2 film or GaN pyramids which were grown by selective metalorganic vapor phase epitaxy (MOVPE). The GaN pyramids served as the seeds for the following HVPE growth of GaN. Uniform layer of 12 μm thick wurtzite GaN was achieved successfully. The full width at half maximum (FWHM) of (0004) X-ray rocking curve was 450 arcsec. The cathode luminescence (CL) spectra at 4.2 K exhibited a strong band edge emission peak of which FWHM was as broad as 30.3 meV.