Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC

Abstract

This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3–70 V dc–dc boost converter is designed, implemented, and verified experimentally. It features a conversion efficiency of 70.3%, output power of 1.68 W, and compact size of ${\text{0.32}}\times {\text{0.18}}\,{\text{cm}}^{2}$ .