Abstract
The design, materials, process, and fabrication of a hybrid substrate for the heterogeneous integration of chips with 50μm-pitch (minimum) by fan-out chip-last panel-level packaging are presented. The hybrid substrate consists of a fine metal linewidth (L), spacing (S), and thickness (H) RDL (redistribution-layer) substrate, solder joints with underfill, and a build-up package substrate. The dielectric material for the fine metal L/S/H RDL-substrate is an Ajinomoto build-up film (ABF).
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