Heterogeneous 3D integration of 17 μm pitch Si/SiGe quantum well bolometer arrays for infrared imaging systems

Abstract

This paper reports on the realization of 17 μm × 17 μm pitch bolometer arrays for uncooled infrared imagers. Microbolometer arrays have been available in primarily defense applications since the mid-1980s and are typically based on deposited thin films on top of CMOS wafers that are surface-machined into sensor pixels. This paper instead focuses on the heterogeneous integration of monocrystalline Si/SiGe quantum-well-based thermistor material in a CMOS-compliant process using adhesive wafer bonding. The high-quality monocrystalline thermistor material opens up for potentially lower noise compared to commercially available uncooled microbolometer arrays together with a competitive temperature coefficient of resistance (TCR). Characterized bolometers had a TCR of −2.9% K−1 in vacuum, measured thermal conductances around 5 × 10−8 W K−1 and thermal time constants between 4.9 and 8.5 ms, depending on the design. Complications in the fabrication of stress-free bolometer legs and low-noise contacts are discussed and analyzed.