Abstract
The van der Waals epitaxy of InSe films was performed on (111)GaAs surface at the growth temperature of 350°C. A spiral trigonal structure was observed on the surface of the InSe films. To improve crystal quality of the InSe films, their orientation control was investigated. The growth rate decreased rapidly as the growth temperature increased and no InSe films were obtained at growth temperatures higher than 480°C. At growth temperatures of 450°C and higher, a double-domain structure was observed, probably due to the coexistence of In4Se3 phase in the films. Therefore, the InSe film was directly grown on c-axis inclined GaSe, and it was revealed that InSe films were more easily grown on GaSe than on (001)GaAs surface, due to the same crystal structure. Furthermore, for fabrication of the quantum well structure, heteroepitaxial growth of GaSe/InSe/GaSe films on (001)GaAs substrate was investigated.
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