Abstract
The recently reported carbon-ion-implantation-outdiffusion method [J. F. Prins and H. L. Gaigher, Mater. Res. Soc. Sym. Proc. (to be published, 1991)] of growing epitaxial diamond layers on copper was carefully examined. X-ray diffraction, Raman scattering, and transmission electron diffraction characterization of films prepared by implanting 200 keV carbon ions into (100), (110), (111), and (210) copper, held at temperatures of 850–1000 °C, showed that the films were invariably highly oriented crystalline graphite. No evidence has been found to support the claim that diamond was formed by this implantation-outdiffusion method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
