Abstract
For the heterostructure with GaSe, the epitaxial growth of GaSxSe1-x films on misoriented (001)GaAs substrate was investigated. We grew c-axis inclined GaSxSe1-x/GaSe/GaSxSe1-x heterostructure films on misoriented (001)GaAs substrate. The scanning electron microscopic (SEM) images and the photoluminescence spectra confirmed the existence of GaSe and GaSxSe1-x layers. Furthermore, multiquantum well structure of the GaSe/GaSxSe1-x system were fabricated for the first time.
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