Abstract
Yttria-stabilized zirconia (YSZ) films have been grown on Si(100) substrates heated at 800°C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of cubic YSZ (200) films on Si(100) substrates. The reflection high-energy electron diffraction of the films show that the <011 > and <010 > directions in the plane of cubic YSZ nearly coincide with the <010 > and <011 > directions of the Si substrate, respectively. Accordingly, (200)-oriented cubic YSZ could be exactly (<1%) lattice-matched to (100)-oriented Si substrates.
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