Abstract
Yttria-stabilized zirconia (YSZ) films have been deposited by vacuum evaporation on Si(100) substrates heated at 800 °C. Rutherford backscattering spectra of the YSZ films show that they are epitaxially grown on the Si(100) substrate, which is consistent with x-ray diffraction and reflection high-energy electron diffraction observations. The spread of crystallite orientation in the epitaxial film is estimated to be 0.22°, by analyzing the angular dependence of the total backscattering yield. The dominant defect is suggested to be a stacking fault by dechanneling ion energy dependence measurements and 30% of the oxygen atoms are displaced from the oxygen sublattice site.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
