Abstract
Heteroepitaxy of a highly mismatch system (∼8%), InP/Si has been studied using low pressure organometallic vapor phase epitaxy (OMVPE). Buffer layer effects on residual stress and defect density in InP/Si have been clarified. Using a 1 μm thick GaAs buffer layer, residual stress in the InP layer has been reduced to as low as 2×10 8 dyn/cm 2 compared to ∼4×10 8 dyn/cm 2 for InP directly grown on Si and ∼6×10 8 dyn/cm 2 for InP on Si with a 1 μm thick GaP buffer layer. Moreover, the GaAs buffer layer has also been confirmed to be effective for improving InP/Si quality by evaluation of etch-it density, X-ray diffraction measurement and observation of cross-sectional transmission electron microscopy. For an InP/GaAs/Si structure, InP growth temperature dependence on surface morphology and etch-pit density is also shown. High quality InP films with etch-pit density of 8×10 6 cm -2 has been obtained on Si substrates by using thermal cycle growth and an InP/GaAs/Si structure.
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